Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

摘要

We propose and computationally analyze a nonvolatile static random accessmemory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) withmagnetic-field-free current-induced magnetization switching (CIMS)architecture. A pair of MTJs connected to the storage nodes of a standard SRAMcell with CIMS architecture enables fully electrical store and restoreoperations for nonvolatile logic information. The proposed NV-SRAM is expectedto be a key component of next-generation power-gating logic systems withextremely low static-power dissipation.